Search
Filters

SSP1N60B

Part No
SSP1N60B
Manufacturer
Fairchild Semiconductor
Package/Case
-
Datasheet
Download
Description
N-CHANNEL POWER MOSFET
Stock
3644

Shipping Information

Shipped from HK warehouse
Expected Shipping Date Mar 9 to Mar 10 2023
Ship today if order in 3:26:31 (HKT)
Supplier Lead-Time Call for availability
Estimate shipping fee
Enter your destination to get a shipping estimate
Estimate shipping fee
Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
1A (Tc)
Drain to Source Voltage (Vdss) :
600 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
215 pF @ 25 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-220-3
Power Dissipation (Max) :
34W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
12Ohm @ 500mA, 10V
Supplier Device Package :
TO-220
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
4V @ 250µA
Datasheets
SSP1N60B

Manufacturer related products

  • Fairchild Semiconductor
    TVS DIODE 15.3VWM 25.5VC DO214AC
  • Fairchild Semiconductor
    TVS DIODE 24VWM 38.9VC DO204AC
  • Fairchild Semiconductor
    TVS DIODE 13VWM 21.5VC DO204AC
  • Fairchild Semiconductor
    TVS DIODE 12VWM 19.9VC DO15
  • Fairchild Semiconductor
    TVS DIODE 33VWM 53.3VC DO15

Catalog related products

footer Upper Image